ssd55n03 55a, 25v, r ds(on) 6m n-ch enhancement mode power mosfet elektronische bauelemente 16-jun-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c d n o p g e f h k j m b to - 252 (d - pack) 55n03 rohs compliant product a suffix of -c specifies halogen free description the sid55n03 provide the designer with the best combination of fast switching,ruggedized device des ign, low on-resistance and cost-effectiveness. the to-25 2 package is universally preferred for all commercial -industrial surface mount applications and suited for low volta ge applications such as dc/dc converters. features dynamic dv/dt rating simple drive requirement repetitive avalanche rated fast switching marking package information package mpq leadersize to-252 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 25 v gate-source voltage v gs 20 v continuous drain current t c =25c i d 55 a t c =100c 35 a pulsed drain current 1 i dm 215 a total power dissipation p d 62.5 w linear derating factor 0.5 w / c single pulse avalanche energy 2 e as 240 mj single pulse avalanche current i as 31 a operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient r ja 110 c / w maximum thermal resistance junction-case r jc 2.0 c / w 1 gate 3 source 2 drain date code ref. millimeter ref. millimeter min. max. min. max. a 6. 4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1. 6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0. 8 1.20
ssd55n03 55a, 25v, r ds(on) 6m n-ch enhancement mode power mosfet elektronische bauelemente 16-jun-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static dran-source breakdown voltage bv dss 25 - - v v gs =0, i d = 250 a breakdown voltage temperature coefficient bv dss / t j - 0.037 - v/c reference to 25c, i d =1ma gate-threshold voltage v gs(th) 1.0 - 3.0 v v ds =v gs , i d =250 a forward transconductance g fs - 30 - s v ds =10v, i d =28a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current t j =25c i dss - - 1 a v ds =25v, v gs =0 t j =150c - - 25 a v ds =20v, v gs =0 static drain-source on-resistance 3 r ds(on) - 4.5 6 m v gs =10v, i d =30a - 7 9 v gs =4.5v, i d =30a total gate charge 3 q g - 16.8 - nc i d =28a v ds =20v v gs =5v gate-source charge q gs - 6.0 - gate-drain (miller) change q gd - 4.9 - turn-on delay time 3 t d(on) - 15.1 - ns v ds =15 v i d =28 a v gs =10v r g =3.3 r d =0.53 rise time t r - 4 - turn-off delay time t d(off) - 45.2 - fall time t f - 7.6 - input capacitance c iss - 2326 - pf v gs =0 v ds =25 v f =1.0mhz output capacitance c oss - 331 - reverse transfer capacitance c rss - 174 - source-drain diode diode forward voltage 3 v sd - - 1.5 v i s =20a, v gs =0, t j =25c continuous source current (body diode) i s - - 55 a v d =v g =0, v s =1.5v notes: 1. pulse width limited by safe operating area. 2. staring t j =25c, v dd =20v, l=0.1mh, r g =25, ? i as =10a. 3. pulse width 300 Q s, duty cycle 2 Q .
ssd55n03 55a, 25v, r ds(on) 6m n-ch enhancement mode power mosfet elektronische bauelemente 16-jun-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
ssd55n03 55a, 25v, r ds(on) 6m n-ch enhancement mode power mosfet elektronische bauelemente 16-jun-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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